? semiconductor components industries, llc, 2008 september, 2008 ? rev. 0 1 publication order number: nsr0240h/d NSR0240HT1G schottky barrier diode schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc ? dc converter, clamping and protection applications in portable devices. nsr0240h in a sod ? 323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. features ? very low forward voltage drop ? 480 mv @ 100 ma ? low reverse current ? 0.2 a @ 25 v vr ? 250 ma of continuous forward current ? power dissipation of 160 mw with minimum trace ? very high switching speed ? low capacitance ? ct = 4 pf ? this is a pb ? free device typical applications ? lcd and keypad backlighting ? camera photo flash ? buck and boost dc ? dc converters ? reverse voltage and current protection ? clamping & protection markets ? mobile handsets ? mp3 players ? digital camera and camcorders ? notebook pcs and pdas ? gps maximum ratings rating symbol value unit reverse voltage v r 40 vdc forward continuous current (dc) i f 250 ma non ? repetitive peak forward surge current i fsm 1.0 a esd rating: human body model machine model esd class 1b class a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 40 volt schottky barrier diode device package shipping ? ordering information NSR0240HT1G sod ? 323* (pb ? free) 3000/tape & reel http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *this package is inherently pb ? free. ac = specific device code m = date code = pb ? free package (note: microdot may be in either location) marking diagram 1 cathode 2 anode sod ? 323 case 477 style 1 1 2 ac m
NSR0240HT1G http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance junction ? to ? ambient (note 1) total power dissipation @ t a = 25 c r ja p d 740 160 c/w mw thermal resistance junction ? to ? ambient (note 2) total power dissipation @ t a = 25 c r ja p d 460 270 c/w mw junction and storage temperature range t j , t stg ? 55 to +150 c 1. mounted onto a 4 in square fr ? 4 board 10 mm sq. 1 oz. cu 0.06? thick single ? sided. operating to steady state. 2. mounted onto a 4 in square fr ? 4 board 1 in sq. 1 oz. cu 0.06? thick single ? sided. operating to steady state. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse leakage (v r = 10 v) (v r = 25 v) (v r = 40 v) i r 0.2 0.6 0.55 2.0 10 a forward voltage (i f = 10 ma) (i f = 100 ma) (i f = 200 ma) v f 345 480 585 450 550 710 mv total capacitance (v r = 5.0 v, f = 1 mhz) ct 4.0 pf reverse recovery time (i f = i r = 10 ma, i r = 1.0 ma) t rr 3.0 ns 1. dc current source is adjusted for a forward current (i f ) of 10 ma. 2. pulse generator output is adjusted for a peak reverse recovery current i rm of 10 ma. 3. pulse generator transition time << t rr . 4. ir(rec) is measured at 1 ma. typically 0.1 x i rm or 0.25 x i rm . 5. t p ? t rr r l = 50 current transformer dut 750 h 0.1 f 50 output pulse generator t r t p 10% 90% i f i rm t rr i r(rec) = 1 ma output pulse (i f = i rm = 10 ma; measured at i r(rec) = 1 ma) i f pulse generator output figure 1. recovery time equivalent test circuit 50 input oscilloscope 0.1 f dc current source 0 v v r adjust for i rm ? +
NSR0240HT1G http://onsemi.com 3 figure 2. forward voltage figure 3. leakage current v f , forward voltage (v) v r , reverse voltage (v) 0.6 0.5 0.4 0.3 0.1 0 0.001 0.01 0.1 1 10 100 1000 35 30 25 20 15 10 5 0 0.00001 0.0001 0.001 0.01 0.1 10 100 1000 figure 4. total capacitance v r , reverse voltage (v) 45 35 25 20 15 10 5 0 0 2 4 6 8 10 12 14 i f , forward current (ma) i r , reverse current ( a) c t , total capacitance (pf) 0.2 150 c 125 c ? 40 c 85 c 25 c 150 c 125 c ? 40 c 85 c 25 c 1 30 40 t a = 25 c
NSR0240HT1G http://onsemi.com 4 package dimensions sod ? 323 case 477 ? 02 issue g style 1: pin 1. cathode 2. anode *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.60 0.063 0.63 0.025 mm inches scale 10:1 0.83 0.033 2.85 0.112 h e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. 4. dimensions a and b do not include mold flash, protrusions or gate burrs. 5. dimension l is measured from end of radius. note 3 d 1 2 b e a3 a1 a c note 5 l h e dim min nom max millimeters a 0.80 0.90 1.00 a1 0.00 0.05 0.10 a3 0.15 ref b 0.25 0.32 0.4 c 0.089 0.12 0.177 d 1.60 1.70 1.80 e 1.15 1.25 1.35 0.08 2.30 2.50 2.70 l 0.031 0.035 0.040 0.000 0.002 0.004 0.006 ref 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 min nom max inches on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hol d scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. nsr0240h/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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